Optical Signature Of The Electron Injection In Ga2O3

Abstract

Electron injection-induced effect and its impact on the optical properties of β-Ga2O3 ultra-wide bandgap semiconductor have not yet been studied. At the same time, this information is critical for β-Ga2O3 applications in photovoltaic devices such as, photodetectors. In this work, we report the variable temperature cathodoluminescence studies of silicon-implanted β-Ga2O3 and identify a possible mechanism for electron injection-induced luminescence decay observed in this material.

Publication Date

1-1-2017

Publication Title

ECS Journal of Solid State Science and Technology

Volume

6

Issue

2

Number of Pages

Q3049-Q3051

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/2.0101702jss

Socpus ID

85011373187 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85011373187

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