Quantitative Analysis Of Crystalline Silicon Wafer Pv Modules By Electroluminescence Imaging
Abstract
Electroluminescence (EL) images are normally used for qualitative analysis of photovoltaic (PV) modules. In this work, detailed quantitative analysis of crystalline silicon wafer PV modules is achieved using EL imaging. Rather than visually detecting problems, the method presented in this work allows people to construct a series of dark current-voltage (I-V) curves for each individual solar cell in the PV module by calibrating EL signals of the cells. The I-V characteristics of each solar cell can then be extracted, and the problems happened to individual cells can be accurately detected and quantified. This method is proved to be very effective in the degradation analysis of PV modules.
Publication Date
1-1-2017
Publication Title
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Number of Pages
1-5
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/PVSC.2017.8366884
Copyright Status
Unknown
Socpus ID
85048485727 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85048485727
STARS Citation
Guo, Siyu; Schneller, Eric; Davis, Kristopher O.; and Schoenfeld, Winston V., "Quantitative Analysis Of Crystalline Silicon Wafer Pv Modules By Electroluminescence Imaging" (2017). Scopus Export 2015-2019. 6599.
https://stars.library.ucf.edu/scopus2015/6599