Electronic Structure And Ultrafast Charge Carrier Dynamics Of Zn Clusters Supported On A P-Si(100) Surface

Creator

Mihai E. Vaida, University of Central Florida
Brett M. Marsh, University of California, Berkeley
Bethany Lamoureux, University of California, Berkeley
Stephen R. Leone, University of California, Berkeley

Abstract

Femtosecond XUV photoemission spectroscopy is employed to monitor the non-metal to metal transition of Zn clusters grown on p-Si(100) as well as the ultrafast charge migration, trapping, and recombination at the surface.

Publication Date

1-1-2017

Publication Title

Optics InfoBase Conference Papers

Volume

Part F68-LS 2017

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/LS.2017.LTu4F.4

Copyright Status

Unknown

Socpus ID

85035097385 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85035097385

STARS Citation

Vaida, Mihai E.; Marsh, Brett M.; Lamoureux, Bethany; and Leone, Stephen R., "Electronic Structure And Ultrafast Charge Carrier Dynamics Of Zn Clusters Supported On A P-Si(100) Surface" (2017). Scopus Export 2015-2019. 6767.
https://stars.library.ucf.edu/scopus2015/6767