Quantum Well Intermixed Tunable Wavelength Single Stripe Laser Diode

Keywords

fabrication; laser diode; multiple quantum well intermixing; Tunable laser

Abstract

A single waveguide laser with two separately addressed sections is fabricated using selective area intermixing of InGaAsP multiple quantum well grown on InP substrate. The selective intermixing of quantum wells is achieved by capping the two sections with PECVD grown silicon nitride and silicon dioxide respectively followed by rapid thermal annealing the device at 750°C for 30s prior to the fabrication of the quantum well laser. The fabricated device is capable of producing laser emission that can be tuned continuously from 1523 nm to 1556 nm by applying separate electrical currents into each 400 μm long section.

Publication Date

1-1-2017

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

10345

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.2274226

Socpus ID

85033486613 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85033486613

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