Large Bandwidth Silicon Nitride Spot-Size Converter For Efficient Supercontinuum Coupling To Chalcogenide Waveguide

Creator

Jean Etienne Tremblay, Department of Electrical Engineering and Computer Sciences
Yung Hsiang Lin, Department of Electrical Engineering and Computer Sciences
Po Kai Hsu, Department of Electrical Engineering and Computer Sciences
Marcin Malinowski, University of Central Florida
Spencer Novak, University of Central Florida

Abstract

Silicon nitride spot-size converters were fabricated in a damascene process to improve the performance of supercontinuum generation in arsenic-free chalcogenide waveguides. Supercontinuum generation covering 950-1750 nm with 200 pJ pulses is demonstrated.

Publication Date

1-1-2017

Publication Title

Optics InfoBase Conference Papers

Volume

Part F41-CLEO_SI 2017

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/CLEO_SI.2017.SF1J.7

Copyright Status

Unknown

Socpus ID

85020284861 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85020284861

STARS Citation

Tremblay, Jean Etienne; Lin, Yung Hsiang; Hsu, Po Kai; Malinowski, Marcin; and Novak, Spencer, "Large Bandwidth Silicon Nitride Spot-Size Converter For Efficient Supercontinuum Coupling To Chalcogenide Waveguide" (2017). Scopus Export 2015-2019. 6856.
https://stars.library.ucf.edu/scopus2015/6856