Mgzno Grown By Molecular Beam Epitaxy On N-Type Β-Ga2O3 For Uv Schottky Barrier Solar-Blind Photodetectors

Abstract

MgZnO is an attractive semiconductor alloy for UV optoelectronic and electronic devices. Due to recent progress and availability of high quality Ga2O3 substrates and its high solar-blind bandgap of ∼4.9 eV, it is desirable to investigate its application for solar-blind applications as a potential substrate alternative to sapphire for MgZnO. MgZnO alloys have been grown using plasma-assisted molecular beam epitaxy on Sn doped n-type (010) β-Ga2O3 substrates. It was found MgZnO growth with a MgO buffer layer has a rocksalt lattice structure. In-situ RHEED observations show that the sample grown with a MgO buffer shows two-dimensional growth and a surface roughness with root-mean-square (RMS) below 2 nm. On the other hand, MgZnO grown without a MgO buffer has a mixed phase of rocksalt and wurtzite lattice structures. Additionally, as the initial step for the fabrication of tunable wavelength solar-blind photodetectors, Schottky barrier photodetectors have been fabricated, demonstrating zero (0 V) bias responsivity of 0.1 μA/W (rocksalt MgZnO), 0.7 μA/W (mixed phase MgZnO) and 1.3 μA/W (mixed phase MgZnO) at 230 nm, 310 nm and 335 nm, respectively.

Publication Date

1-1-2017

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

10105

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.2254937

Socpus ID

85019638370 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85019638370

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