Work Function Extraction Of Indium Tin Oxide Used As Transparent Gate Electrode For Mosfet

Abstract

Recent commercialization has increased the research interest in transparent conducting oxides like Indium Tin Oxide (ITO) being implemented in display technologies and sensors. RF sputtered ITO is used as a transparent gate electrode to fabricate n-MOSFET. For the fabrication of the MOSFET, a four-level mask is used. Electrical characterization is performed on these MOSFETs. Work function (WI) of ITO is extracted from the threshold voltage measurements of the MOSFET devices. A new method of extracting work function of ITO from n-MOSFET device is introduced in this study.

Publication Date

1-1-2017

Publication Title

ECS Transactions

Volume

77

Issue

11

Number of Pages

1905-1910

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/07711.1905ecst

Socpus ID

85030548741 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85030548741

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