Challenges Associated With Diamond Wire Sawing When Generating Reduced Thickness Mono-Crystalline Silicon Wafers

Keywords

Diamond wire; Reflectance; Sawing; Silicon; Surface roughness; Wafers

Abstract

Being able to saw and process thinner wafers would allow in principle for further cost reductions in the PV industry if kerf losses can be further reduced and current yield associated with handling and processing of standard thickness wafer can be preserved. In order to enable handling and processing of thinner wafers with high yield, wafer specifications will need to scale appropriately in addition to reducing the thermal and mechanical load experienced during cell and module fabrication. In this work, we identify challenges of sawing thinner wafers down to 100 μm using diamond wire. We also report the characterization of the 'as-cut' wafers via TTV, bow, surface roughness, reflectance, and the presence of cracks for the different wafer thicknesses.

Publication Date

1-1-2017

Publication Title

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Number of Pages

2906-2911

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC.2017.8366101

Socpus ID

85048472303 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85048472303

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