Interfacial Structure And Passivation Properties Of Al2O3 On Silicon

Abstract

Al2O3 passivation films deposited on Si(100) via atmospheric chemical vapor deposition were studied using transmission electron microscopy coupled with electron energy loss spectroscopy and correlated with changes in defect density (Dit), flatband voltage (Vfb), and surface recombination velocity (Seff). The as-deposited films exhibit a high degree of interfacial strain and relatively high Dit, and both are significantly reduced with annealing. A low surface recombination velocity (≈9 cm/s) was attained when annealed at 500 °C for 30 min. and the formation of an amorphous Si-O-Al (a silicate glass) interfacial layer between the Si and the Al2O3 film.

Publication Date

1-1-2017

Publication Title

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Number of Pages

42-45

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC.2017.8366229

Socpus ID

85048483141 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85048483141

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