3D Stress Reconstruction From Birefringence Measurement For Photovoltaic Si Ingots

Keywords

Birefringence; Ingot; Retardation; Silicon

Abstract

Residual stress or other defects in silicon CZ ingot can lead to cracks in wafers cut from that ingot, themselves resulting in PV modules to perform poorly or even to fail. The ability to detect high levels of stress or crystallographic defects before processing an ingot would help reduce cost and improve reliability. However, analyzing stress in an ingot is a difficult problem. In this paper, we present a way of using birefringence measurement to build a 3D reconstruction of the ingot. This method allows a better understanding of residual stress distribution in a given ingot and will assist, we hope, the PV industry in the growing of silicon ingot.

Publication Date

1-1-2017

Publication Title

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Number of Pages

487-489

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC.2017.8366327

Socpus ID

85048510737 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85048510737

This document is currently not available here.

Share

COinS