A Vertically-Stacked Anti-Polar Diode (Vad) Pixel For Organic Semiconductor Image Sensors
Abstract
A novel pixel structure is demonstrated to provide simple patterning for switchable 2-terminal devices with almost 100% fill factor. A blocking diode is grown directly on top of an organic photodiode to provide a vertically stacked structure that can easily be integrated in series.
Publication Date
11-20-2017
Publication Title
30th Annual Conference of the IEEE Photonics Society, IPC 2017
Volume
2017-January
Number of Pages
645-646
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/IPCon.2017.8116263
Copyright Status
Unknown
Socpus ID
85043486183 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85043486183
STARS Citation
Kassel, J.; Ma, Z.; and Renshaw, C. K., "A Vertically-Stacked Anti-Polar Diode (Vad) Pixel For Organic Semiconductor Image Sensors" (2017). Scopus Export 2015-2019. 7483.
https://stars.library.ucf.edu/scopus2015/7483