Extremely Nondegenerate Two-Photon Processes In Semiconductors
Keywords
Infrared Detectors; Nonlinear Optics; Semiconductor Lasers; Semiconductors
Abstract
Direct-gap semiconductors show enhanced two-photon absorption and nonlinear refraction for the extremely non-degenerate case, i.e. for two light waves of very different wavelength, as compared to the degenerate case. We have verified this through measurements of non-degenerate two-photon absorption and nonlinear refraction in several direct-gap semiconductors. We have demonstrated application towards mid-infrared detection and imaging, as well as 2-photon gain in the mid infrared. We also show how semiconductor quantum wells may be employed to engineer even larger enhancements of these effects.
Publication Date
1-1-2017
Publication Title
PHOTOPTICS 2017 - Proceedings of the 5th International Conference on Photonics, Optics and Laser Technology
Volume
2017-January
Number of Pages
65-69
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.5220/0006104700650069
Copyright Status
Unknown
Socpus ID
85049258192 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85049258192
STARS Citation
Hagan, David J.; Pattanaik, Himansu S.; Zhao, Peng; Reichert, Matthew; and Van Stryland, Eric W., "Extremely Nondegenerate Two-Photon Processes In Semiconductors" (2017). Scopus Export 2015-2019. 7488.
https://stars.library.ucf.edu/scopus2015/7488