Dispersion Of Extremely Nondegenerate Nonlinear Refraction In Semiconductors

Abstract

Dispersion of nondegenerate nonlinear refraction in semiconductors is measured using the Beam-Deflection technique. With large nondegeneracy, n2 is greatly enhanced and exhibits a strong nonlinear dispersion, which rapidly switches sign to negative near the bandgap. Potential applications including nondegenerate all-optical switching and pulse shaping are discussed.

Publication Date

11-20-2017

Publication Title

30th Annual Conference of the IEEE Photonics Society, IPC 2017

Volume

2017-January

Number of Pages

711-712

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/IPCon.2017.8116291

Socpus ID

85043474986 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85043474986

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