Title
Dispersion Of Extremely Nondegenerate Nonlinear Refraction In Semiconductors
Abstract
Dispersion of nondegenerate nonlinear refraction in semiconductors is measured using the Beam-Deflection technique. With large nondegeneracy, n2 is greatly enhanced and exhibits a strong nonlinear dispersion, which rapidly switches sign to negative near the bandgap. Potential applications including nondegenerate all-optical switching and pulse shaping are discussed.
Publication Date
11-20-2017
Publication Title
30th Annual Conference of the IEEE Photonics Society, IPC 2017
Volume
2017-January
Number of Pages
711-712
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/IPCon.2017.8116291
Copyright Status
Unknown
Socpus ID
85043474986 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85043474986
STARS Citation
Zhao, Peng; Hagan, David J.; and Van Stryland, Eric W., "Dispersion Of Extremely Nondegenerate Nonlinear Refraction In Semiconductors" (2017). Scopus Export 2015-2019. 7500.
https://stars.library.ucf.edu/scopus2015/7500