Temperature Coefficient Of Frequency In Silicon-Based Cross-Sectional Quasi Lam E; Mode Resonators

Keywords

Lame mode; MEMS resonator; piezoelectric actuation; temperature coefficient of frequency (TCF)

Abstract

Temperature coefficient of frequency (TCF) is studied in silicon-based cross-sectional quasi Lamé modes (CQLMs). Such modes are demonstrated in thin-film piezoelectric-on-silicon (TPoS) resonators and the TCF curves are modeled using eigenfrequency analysis in COMSOL for highly n-type doped silicon. It is shown that the ratio between the finger-pitch and the resonator thickness affects the turnover temperature of these resonators which could be predicted using this model. The CQLM-TPoS resonators fabricated on a 40\mu\mathbf{m} thick SOI substrate, are characterized and the measured TCF values are confirmed to be in close agreement with the prediction. A relatively high turnover temperature of >100°C is reported for a third-order CQLM-TPoS resonator aligned to <100> silicon plane while a turnover temperature of <20°C is recorded for the <110> counterpart.

Publication Date

12-31-2018

Publication Title

IFCS 2018 - IEEE International Frequency Control Symposium

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/FCS.2018.8597506

Socpus ID

85061787474 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85061787474

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