An Analysis Of Voltage-Driven Spintronic Device Concatenation Through Spin Pumping

Abstract

A prominent issue with spintronic architectures is the requirement to use charge current in order to realize magnetic state transduction, and thus, device concatenation, which is far less efficient than voltage-based devices, such as CMOS. With the advent and implementation of new spintronic technologies such as topological insulators and magnetoelectric materials, great improvements in energy efficiency have been achieved and are expected to improve. One may surmise that such technologies could provide an avenue to voltage-driven spintronic device concatenation. In this work, we explore the possibility of utilizing the magnetoelectric effect to induce ferromagnetic resonance, injecting pure spin current into an adjacent topological insulator through Spin Pumping, which then induces a potential difference depending upon the state of the ferromagnet that can then be used to switch cascaded devices. Thus, implementing voltage-based spintronic concatenation. By using a purely energy-based perspective of a sandbox device model to explore the constraints and boundaries of such behaviors, the potential and challenges of such a scheme are identified and discussed.

Publication Date

10-1-2018

Publication Title

Conference Proceedings - IEEE SOUTHEASTCON

Volume

2018-April

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/SECON.2018.8479018

Socpus ID

85056206090 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85056206090

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