Laser Diodes Using Inalgaas Multiple Quantum Wells Intermixed To Varying Extent

Keywords

Bandgap tuning; IFVD; InAlGaAs laser; loss measurement; quantum well intermixing; QWI

Abstract

Bandgap-modified InAlGaAs/InP multi-quantum well lasers have been demonstrated using an impurity-free disordering technique. Varying degrees of disordering are achieved by rapidly annealing silicon nitride-capped samples at temperatures ranging from 730°C to 830°C for 20 s. The lasing wavelength shift resulting from the intermixing, ranges between 28.2 nm and 147.2 nm. As the annealing temperature is increased, the lasing threshold currents of the fabricated waveguide lasers increase from 25mA to 45mA, while the slope efficiency decrease from 0.101 W/A to 0.068 W/A, compared to a threshold current of 27.8 mA and a slope efficiency of 0.121 W/A for an as-grown laser diode.

Publication Date

1-1-2018

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

10553

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.2311369

Socpus ID

85045144115 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85045144115

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