10 Mev Proton Damage In Β-Ga2O3 Schottky Rectifiers

Abstract

The electrical performance of vertical geometry Ga2O3 rectifiers was measured before and after 10 MeV proton irradiation at a fixed fluence of 1014 cm-2, as well as subsequent annealing up to 450 °C. Point defects introduced by the proton damage create trap states that reduce the carrier concentration in the Ga2O3, with a carrier removal rate of 235.7 cm-1 for protons of this energy. The carrier removal rates under these conditions are comparable to GaN-based films and heterostructures. Even annealing at 300 °C produces a recovery of approximately half of the carriers in the Ga2O3, while annealing at 450 °C almost restores the reverse breakdown voltage. The on/off ratio of the rectifiers was severely degraded by proton damage and this was only partially recovered by 450 °C annealing. The minority carrier diffusion length decreased from ∼340 nm in the starting material to ∼315 nm after the proton irradiation. The reverse recovery characteristics showed little change with values in the range 20-30 ns before and after proton irradiation.

Publication Date

1-1-2018

Publication Title

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

Volume

36

Issue

1

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1116/1.5013155

Socpus ID

85040461491 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85040461491

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