10 Mev Proton Damage In Β-Ga2O3 Schottky Rectifiers
Abstract
The electrical performance of vertical geometry Ga2O3 rectifiers was measured before and after 10 MeV proton irradiation at a fixed fluence of 1014 cm-2, as well as subsequent annealing up to 450 °C. Point defects introduced by the proton damage create trap states that reduce the carrier concentration in the Ga2O3, with a carrier removal rate of 235.7 cm-1 for protons of this energy. The carrier removal rates under these conditions are comparable to GaN-based films and heterostructures. Even annealing at 300 °C produces a recovery of approximately half of the carriers in the Ga2O3, while annealing at 450 °C almost restores the reverse breakdown voltage. The on/off ratio of the rectifiers was severely degraded by proton damage and this was only partially recovered by 450 °C annealing. The minority carrier diffusion length decreased from ∼340 nm in the starting material to ∼315 nm after the proton irradiation. The reverse recovery characteristics showed little change with values in the range 20-30 ns before and after proton irradiation.
Publication Date
1-1-2018
Publication Title
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume
36
Issue
1
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1116/1.5013155
Copyright Status
Unknown
Socpus ID
85040461491 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85040461491
STARS Citation
Yang, Jiancheng; Chen, Zhiting; Ren, Fan; Pearton, S. J.; and Yang, Gwangseok, "10 Mev Proton Damage In Β-Ga2O3 Schottky Rectifiers" (2018). Scopus Export 2015-2019. 8187.
https://stars.library.ucf.edu/scopus2015/8187