Highly Sensitive Mos2 Photodetectors With Graphene Contacts
Keywords
heterostructures; photodetectors; two-dimensional materials
Abstract
Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.
Publication Date
3-19-2018
Publication Title
Nanotechnology
Volume
29
Issue
20
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1088/1361-6528/aab4bb
Copyright Status
Unknown
Socpus ID
85044835346 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85044835346
STARS Citation
Han, Peize; St Marie, Luke; Wang, Qing X.; Quirk, Nicholas; and El Fatimy, Abdel, "Highly Sensitive Mos2 Photodetectors With Graphene Contacts" (2018). Scopus Export 2015-2019. 8213.
https://stars.library.ucf.edu/scopus2015/8213