Elimination Of V-Shaped Pits In Ingan/Gan/Aln/Gan Heterostructure By Metal Modulation Growth Technique

Keywords

HRXRD; InGaN/GaN; metal modulation growth; PA-CTMBE

Abstract

In this paper, we have demonstrated the growth process of higher Indium content indium gallium nitride (InGaN) epitaxial layer of InGaN/GaN/AlN/GaN heterostructure without any V-shaped pits formation on the growth surface. The epitaxial InGaN with In fraction of 16%, 22% and 26% has been grown by using metal modulation growth scheme. The direct growth of relaxed InGaN structures with In content of 16% and 22% on GaN/AlN/GaN periodic layer shows higher density of V-shaped pits on the surface, as the InGaN epilayer is experienced to higher lattice relaxation and threading dislocation density. But for the 26% In mole heterostructure, the V pits are mitigated by varying the Indium fraction from 16% to 26% via 22% in bottom to top direction of the structure. The FESEM images have also confirmed the absence of any pits formation in 26% In content InGaN heterostructure, which is due to the lesser lattice relaxation and threading dislocation density. The different contents of Indium are confirmed by room temperature photoluminescence and XRD measurements.

Publication Date

2-5-2018

Publication Title

Semiconductor Science and Technology

Volume

33

Issue

3

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1088/1361-6641/aaa7cc

Socpus ID

85043483584 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85043483584

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