Monolithically Integrated Ingaasp Multiple Quantum Well Tunable Laser Diode For Integrated Optic Surface Plasmon Resonance Sensing
Keywords
biosensor; fabrication; laser diode; multiple quantum well intermixing; surface plasmon resonance; tunable laser
Abstract
We demonstrate an InGaAsP multiple quantum well tunable laser diode consisting of two gain sections with different bandgap energy levels. This tunable laser is used as a probing source for an optical sensor that makes use of surface plasmon resonance (SPR). Lasers fabricated on a single monolithic substrate can have widely differing output wavelengths. Therefore, by controlling the extent of the intermixing, the bandgap energy of the material can be accurately tuned over a broad spectral range. The regions of different bandgap energies are achieved using selective area intermixing of the multiple quantum wells, through impurity-free vacancy-induced disordering. By varying the current combination that was injected to each section, the laser wavelength can be effortlessly tuned from 1538 to 1578 nm with relatively constant output power. The free spectral range of the tunable laser is found to be 0.25 nm. This tunable laser was launched into an optical SPR sensor head that was fabricated on an inverted rib dielectric waveguide to provide an input light source for the SPR sensor. The average sensitivity of the SPR sensor devices was determined to be S = 334 nm RIU- 1.
Publication Date
12-1-2018
Publication Title
Optical Engineering
Volume
57
Issue
12
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/1.OE.57.12.120503
Copyright Status
Unknown
Socpus ID
85059124798 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85059124798
STARS Citation
Tabbakh, Thamer and LiKamWa, Patrick, "Monolithically Integrated Ingaasp Multiple Quantum Well Tunable Laser Diode For Integrated Optic Surface Plasmon Resonance Sensing" (2018). Scopus Export 2015-2019. 8229.
https://stars.library.ucf.edu/scopus2015/8229