Effect Of 1.5 Mev Electron Irradiation On Β-Ga2O3 Carrier Lifetime And Diffusion Length

Abstract

The influence of 1.5 MeV electron irradiation on minority transport properties of Si doped β-Ga2O3 vertical Schottky rectifiers was observed for fluences up to 1.43 × 1016 cm-2. The Electron Beam-Induced Current technique was used to determine the minority hole diffusion length as a function of temperature for each irradiation dose. This revealed activation energies related to shallow donors at 40.9 meV and radiation-induced defects with energies at 18.1 and 13.6 meV. Time-resolved cathodoluminescence measurements showed an ultrafast 210 ps decay lifetime and reduction in carrier lifetime with increased irradiation.

Publication Date

2-19-2018

Publication Title

Applied Physics Letters

Volume

112

Issue

8

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1063/1.5011971

Socpus ID

85042670295 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85042670295

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