P-Cuo Nanowire/N-Zno Nanosheet Heterojunction-Based Near-Uv Sensor Fabricated By Electroplating And Thermal Oxidation Process

Keywords

CuO nanowire; Heterojunction; Metal oxide semiconductor; Near-UV sensor; ZnO nanosheet

Abstract

Nanostructured metal oxide semiconductors (MOSs) are widely used in the field of sensors. Different from the traditional single MOS based sensors, heterojunction-based sensors using two different MOS materials can take advantage of the charge separation effect at the heterojunction interface for an enhanced sensing mechanism. In this work, an in-situ synthesis method of p-CuO nanowire/n-ZnO nanosheet heterojunctions and its application for near-ultraviolet light detection was demonstrated. A rectifying behavior arising from the heterojunctions was observed in the I-V characterization. Under different illumination conditions, the photocurrent obeys a power law with a detection limit around 16.8 mW/mm2, validating the potential for near-UV sensing applications.

Publication Date

7-15-2018

Publication Title

Materials Letters

Volume

223

Number of Pages

170-173

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.matlet.2018.04.042

Socpus ID

85045270522 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85045270522

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