Silicon Heterojunction System Field Performance

Keywords

Durability; Heterojunction with intrinsic thin-film layer (HIT); Photovoltaic (PV) field performance; Si heterojunction; Terms - Degradation rates

Abstract

A silicon heterostructure photovoltaic system fielded for 10 years has been investigated in detail. The system has shown degradation, but at a rate similar to an average Si system, and still within the module warranty level. The power decline is dominated by a nonlinear Voc loss rather than more typical changes in Isc or Fill Factor. Modules have been evaluated using multiple techniques including: dark and light I-V measurement, Suns-Voc , thermal imaging, and quantitative electroluminescence. All techniques indicate that recombination and series resistance in the cells have increased along with a decrease of factor 2 in minority carrier lifetime. Performance changes are fairly uniform across the module, indicating changes occur primarily within the cells.

Publication Date

1-1-2018

Publication Title

IEEE Journal of Photovoltaics

Volume

8

Issue

1

Number of Pages

177-182

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/JPHOTOV.2017.2765680

Socpus ID

85035143546 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85035143546

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