Processing And Fabrication Of Microstructures By Multiphoton Lithography In Germanium-Doped Arsenic Selenide

Abstract

This work reports the processing and properties of a new chalcogenide glass film that can be photo-patterned by multiphoton lithography (MPL) with enhanced post-fabrication stability. Thermally evaporated germanium-doped arsenic selenide [Ge5(As2Se3)95] thin films were photo-patterned using the output of a mode-locked titanium:sapphire laser. The morphology, chemical structure, and optical properties of the material were studied before and after photo-patterning and compared for their long-term aging behavior and stability to previously investigated arsenic trisulfide (As2S3) films fabricated using similar MPL conditions. Relative to As2S3, thermally deposited Ge5(As2Se3)95 is found to offer higher photosensitivity and greater chemical stability after photo-patterning, as evidenced by lack of ageinduced crystallization and reduced feature degradation over a four year aging period. These findings demonstrate the suitability of a new photo-patternable material for the creation of robust, long-lived functional infrared anti-reflective coatings and meta-optics.

Publication Date

7-1-2018

Publication Title

Optical Materials Express

Volume

8

Issue

7

Number of Pages

1902-1915

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/OME.8.001902

Socpus ID

85048677948 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85048677948

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