Polyimide For Silicon Solar Cells With Double-Sided Textured Pyramids

Keywords

ALD AlO x; Back-contact; Diffusions; High efficiency; IBC; Passivation; PECVD nitride; Polyimide; Ray trace; Rear texture; Solar cell

Abstract

Silicon solar cells incorporating double-sided pyramidal texture are capable of superior light trapping over cells with front-side only texture. However, increased surface area, roughness and exposed <111> crystal planes of textured surfaces not only causes increased recombination, but also makes cells susceptible to shunting through pinholes in the dielectric at the sharp peaks and valleys of the textured pyramids. A polyimide film as an insulating interlayer film is investigated to circumvent the tradeoff between improved light trapping, increased recombination and increased shunt paths. When applied at the rear of the interdigitated back contact silicon solar cell structure, the polyimide film provides an excellent electrical insulation (> 1000 MΩ of insulation resistance) and increases photocurrent (~ 1.1 mA/cm2) owing to an increased rear internal reflectance. The polyimide is also compatible with metal annealing of passivating dielectrics such as silicon nitride. Optical simulation and experimental results are combined in a 3D semiconductor simulation (Quokka) to quantify the possible gain of implementing the double-sided texture in high efficiency silicon solar cells.

Publication Date

8-15-2018

Publication Title

Solar Energy Materials and Solar Cells

Volume

183

Number of Pages

200-204

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.solmat.2018.03.015

Socpus ID

85046649962 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85046649962

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