Reconfigurable Near-Ir Metasurface Based On Ge2Sb2Te5 Phase-Change Material

Abstract

A reconfigurable metasurface made of Ge2Sb2Te5 phase-change material was experimentally demonstrated in the 1.55 μm wavelength range. A nanostructured Ge2Sb2Te5 film on fused silica substrate was optimized to switch from highly transmissive (80%) to highly absorptive (76%) modes with a 7:1 contrast ratio in transmission independent of polarization, when thermally transformed from the amorphous to crystalline state. The metasurface was designed using a genetic algorithm optimizer linked with an efficient fullwave electromagnetic solver.

Publication Date

8-1-2018

Publication Title

Optical Materials Express

Volume

8

Issue

8

Number of Pages

2264-2275

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/OME.8.002264

Socpus ID

85050306471 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85050306471

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