Rc-Embedded Ldmos-Scr With High Holding Current For High-Voltage I/O Esd Protection

Keywords

Electrostatic discharge (ESD); failure current; holding current; lateral diffusion metal-oxide semiconductor (LDMOS); silicon-controlled rectifier (SCR); trigger voltage

Abstract

A novel lateral diffusion MOS-embedded silicon-controlled rectifier with a high holding current (LDMOS-SCR-HHC) is proposed and verified in a 0.25-μ m 18-V Bipolar-CMOS-DMOS process. By adding an imbedded P+ region located next to the source region of an LDMOS-SCR and connecting the P+ region to the gate, the LDMOS-SCR-HHC exhibits a relatively HHC, small trigger voltage, and strong electrostatic discharge (ESD) robustness. As such, the proposed LDMOS-SCR-HHC is an attractive device for constructing effective and latch-up immune ESD protection solutions for high-voltage I/O ports.

Publication Date

12-1-2015

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

15

Issue

4

Number of Pages

495-499

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2015.2463120

Socpus ID

84960415428 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84960415428

This document is currently not available here.

Share

COinS