Thermally Stable Molybdenum Oxide Hole-Selective Contacts Deposited Using Spatial Atomic Layer Deposition

Keywords

carrier selective contacts; silicon; transition metal oxides

Abstract

Sub-stoichiometric MoO x has been identified as a viable replacement to p-type a-Si:H in hole-selective contacts to c-Si solar cells. Many groups have observed a strong tendency for the electrical properties of MoO x -based contacts to degrade during the standard contact formation anneal due to the addition of O vacancies in the MoO x . These O vacancies create defect levels within the bandgap and lowers the work function of the MoO x , which in turn affects the efficiency of hole-conduction through the contact. In this paper, we grow a thin tunneling SiO x layer over p-type c-Si via UV-ozone treatment, followed by a thin (∼5 nm) MoO x deposited using spatial atomic layer deposition. We show that the use of the high work function (5.01 eV) Nickel, as a replacement to the Aluminum contact, not only assists in efficient hole-transport, but also forms a thermally stable contact up to temperatures of 300°C with contact resistivities below 10 mΩ-cm 2 .

Publication Date

11-26-2018

Publication Title

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Number of Pages

2006-2009

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC.2018.8547343

Socpus ID

85059881962 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85059881962

This document is currently not available here.

Share

COinS