Detailed Performance Loss Analysis Of Silicon Solar Cells Using High-Throughput Metrology Methods

Keywords

performance analysis; performance loss; photovoltaic cell; semiconductor device manufacture; semiconductor device measurement; silicon; silicon devices

Abstract

In this work, novel, high-throughput metrology methods are used to perform a detailed performance loss analysis of \approx400 industrial crystalline silicon solar cells, all coming from the same production line. The characterization sequence includes a non-destructive transfer length method (TLM) measurement technique featuring circular TLM structures hidden within the busbar region of the cells. It also includes a very fast external quantum efficiency and reflectance measurement technique. More traditional measurements, like illuminated current-voltage, SunsV -{OC}, and photoluminescence imaging are also used to carry out the loss analysis. The variance of the individual loss parameters and their impact on cell performance are investigated and quantified for this large group of industrial solar cells. Some important correlations between the measured loss parameters are found. The nature of these distributions and correlations provide important insights about loss mechanisms in a cell and help prioritize efforts to optimize the performance of the production line.

Publication Date

11-26-2018

Publication Title

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Number of Pages

2214-2218

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/PVSC.2018.8547869

Socpus ID

85059884520 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85059884520

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