Atomic Layer Deposition Of Molybdenum Oxides With Tunable Stoichiometry Enables Controllable Doping Of Mos2

Abstract

A study demonstrates two new low-temperature atomic layer deposition (ALD) processes and use them to deposit molybdenum oxides with controlled molybdenum oxidation states. The optical bandgaps and resistivities increase with increasing oxygen content, following the same trends as crystalline molybdenum oxides. The study dopes MoS2 by depositing a MoOx overlayer and tune the threshold voltage shift in thin film transistors (TFTs) from positive (p-type) to negative (n-type) by tuning the oxide composition. Low hysteresis in sweeps of the transistor gate voltage, an absence of strain, and reversibility upon oxide etching together suggest that this process maintains the van der Waals interface without significant chemical changes, and should be applicable as a doping strategy for 2D systems.

Publication Date

6-12-2018

Publication Title

Chemistry of Materials

Volume

30

Issue

11

Number of Pages

3628-3632

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1021/acs.chemmater.8b01171

Socpus ID

85047413088 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85047413088

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