Effect Of Base Profile On The Base Transit-Time Of The Bipolar-Transistor For All Levels Of Injection
Abbreviated Journal Title
IEEE Trans. Electron Devices
SILICON; BICMOS; SPEED; FT; Engineering, Electrical & Electronic; Physics, Applied
The effect of the base profile on the base transit time of the bipolar transistor for all levels of injection has been presented. Comparing the uniform base profile with the exponential base profile in low injection, the uniform base profile gives a lower base transit time for a given base resistance and peak base concentration, while the exponential base profile gives a lower base transit time for a given base resistance and base width at large base widths. At high injection the uniform base profile always gives the minimum base transit time. The uniform base doping is the optimal base profile for BiCMOS circuits in which the bipolar transistors are operated under high injection.
Ieee Transactions on Electron Devices
"Effect Of Base Profile On The Base Transit-Time Of The Bipolar-Transistor For All Levels Of Injection" (1995). Faculty Bibliography 1990s. 1249.