Effect Of Base Profile On The Base Transit-Time Of The Bipolar-Transistor For All Levels Of Injection

    Authors

    J. S. Yuan

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    SILICON; BICMOS; SPEED; FT; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The effect of the base profile on the base transit time of the bipolar transistor for all levels of injection has been presented. Comparing the uniform base profile with the exponential base profile in low injection, the uniform base profile gives a lower base transit time for a given base resistance and peak base concentration, while the exponential base profile gives a lower base transit time for a given base resistance and base width at large base widths. At high injection the uniform base profile always gives the minimum base transit time. The uniform base doping is the optimal base profile for BiCMOS circuits in which the bipolar transistors are operated under high injection.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    41

    Issue/Number

    2

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    212

    Last Page

    216

    WOS Identifier

    WOS:A1994NA21300013

    ISSN

    0018-9383

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