Title

Effect Of Base Profile On The Base Transit-Time Of The Bipolar-Transistor For All Levels Of Injection

Authors

Authors

J. S. Yuan

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

SILICON; BICMOS; SPEED; FT; Engineering, Electrical & Electronic; Physics, Applied

Abstract

The effect of the base profile on the base transit time of the bipolar transistor for all levels of injection has been presented. Comparing the uniform base profile with the exponential base profile in low injection, the uniform base profile gives a lower base transit time for a given base resistance and peak base concentration, while the exponential base profile gives a lower base transit time for a given base resistance and base width at large base widths. At high injection the uniform base profile always gives the minimum base transit time. The uniform base doping is the optimal base profile for BiCMOS circuits in which the bipolar transistors are operated under high injection.

Journal Title

Ieee Transactions on Electron Devices

Volume

41

Issue/Number

2

Publication Date

1-1-1995

Document Type

Article

DOI Link

http://dx.doi.org/10.1109/16.277377

Language

English

First Page

212

Last Page

216

WOS Identifier

WOS:A1994NA21300013

ISSN

0018-9383

Recommended Citation

"Effect Of Base Profile On The Base Transit-Time Of The Bipolar-Transistor For All Levels Of Injection" (1995). Faculty Bibliography 1990s. 1249.
https://stars.library.ucf.edu/facultybib1990/1249