The Fabrication Of Metal-Oxide Semiconductor Transistors Using Cerium Dioxide As A Gate Oxide Material
Abbreviated Journal Title
J. Vac. Sci. Technol. B
Cerium dioxide was employed as a gate insulator for an enhancement-type n-channel metal-oxide-semiconductor (MOS) transistor. Cerium was evaporated in a tungsten boat and immediately oxidized for oxide uniformity. The use of CeO2 as a gate oxide in MOS transistor yielded a low positive threshold voltage with negligible interface charge effects. This resulted in the transistor performing as an enhancement type device.
Journal of Vacuum Science & Technology B
"The Fabrication Of Metal-Oxide Semiconductor Transistors Using Cerium Dioxide As A Gate Oxide Material" (1991). Faculty Bibliography 1990s. 229.