Abbreviated Journal Title
J. Vac. Sci. Technol. B
Abstract
Cerium dioxide was employed as a gate insulator for an enhancement-type n-channel metal-oxide-semiconductor (MOS) transistor. Cerium was evaporated in a tungsten boat and immediately oxidized for oxide uniformity. The use of CeO2 as a gate oxide in MOS transistor yielded a low positive threshold voltage with negligible interface charge effects. This resulted in the transistor performing as an enhancement type device.
Journal Title
Journal of Vacuum Science & Technology B
Volume
9
Issue/Number
1
Publication Date
1-1-1991
Document Type
Note
DOI Link
Language
English
First Page
181
Last Page
183
WOS Identifier
ISSN
1071-1023
Recommended Citation
Frangoul, A. G.; Sundaram, K. B.; and Wahid, P. F., "The Fabrication Of Metal-Oxide Semiconductor Transistors Using Cerium Dioxide As A Gate Oxide Material" (1991). Faculty Bibliography 1990s. 229.
https://stars.library.ucf.edu/facultybib1990/229
Comments
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