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Keywords

Electron Traps; Epitaxial Gaas; Annealed Gaas; Bulk; Dlts; Physics; Applied

Abstract

Deep-level transient spectroscopy (DLTS) measurements have been made to obtain the activation energy and capture cross section in Schottky diodes. Previous theories for interface state density (ISD) functions, which are derived for metal-semiconductor junctions, made approximations that were inappropriate. This paper derives improvements to the previous analysis and calculates ISD using the measured DLTS data. As for examples, Schottky diodes of Si, GaAs, and Al(x)Ga(1-x)As have been investigated with both methods. It has been found that the previously used method overestimated both the peak maximum position and peak height of the ISD.

Journal Title

Journal of Applied Physics

Volume

69

Issue/Number

9

Publication Date

1-1-1991

Document Type

Article

Language

English

First Page

6521

Last Page

6525

WOS Identifier

WOS:A1991FM17100044

ISSN

0021-8979

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