Avalanche Multiplication In Forward-Active And Reverse-Active Mode Bipolar Junction Transistors
Abbreviated Journal Title
Int. J. Electron.
Engineering, Electrical & Electronic
Impact ionization in the reverse-biased base-collector space-charge layer of the bipolar junction transistor (BJT) can cause an avalanche collector current as well as a reverse (or negative) base current. We develop analytical models to predict and compare avalanche phenomena in the BJT biased under forward-active and under reverse-active operations. The models consider a position-dependent electric field in the space-charge layer, the effect of the non-uniform doping profile, and the excess free carriers associated with the current passing through the space-charge layer. For the specified device make-up and parameters used, our results suggest that avalanche is more prominent in the reverse-active BJT than the forward-active BJT. The physics underlying this occurrence is given, and experimental data obtained from an advanced BJT is included in support of the models.
International Journal of Electronics
"Avalanche Multiplication In Forward-Active And Reverse-Active Mode Bipolar Junction Transistors" (1993). Faculty Bibliography 1990s. 833.