Avalanche Multiplication In Forward-Active And Reverse-Active Mode Bipolar Junction Transistors

    Authors

    J. J. Liou

    Comments

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    Abbreviated Journal Title

    Int. J. Electron.

    Keywords

    Engineering, Electrical & Electronic

    Abstract

    Impact ionization in the reverse-biased base-collector space-charge layer of the bipolar junction transistor (BJT) can cause an avalanche collector current as well as a reverse (or negative) base current. We develop analytical models to predict and compare avalanche phenomena in the BJT biased under forward-active and under reverse-active operations. The models consider a position-dependent electric field in the space-charge layer, the effect of the non-uniform doping profile, and the excess free carriers associated with the current passing through the space-charge layer. For the specified device make-up and parameters used, our results suggest that avalanche is more prominent in the reverse-active BJT than the forward-active BJT. The physics underlying this occurrence is given, and experimental data obtained from an advanced BJT is included in support of the models.

    Journal Title

    International Journal of Electronics

    Volume

    75

    Issue/Number

    6

    Publication Date

    1-1-1993

    Document Type

    Article

    Language

    English

    First Page

    1143

    Last Page

    1151

    WOS Identifier

    WOS:A1993ML53300011

    ISSN

    0020-7217

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