Avalanche Breakdown Effects On Algaas/Gaas Hbt Performance

    Authors

    J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Int. J. Electron.

    Keywords

    COLLECTOR BASE JUNCTION; BIPOLAR-TRANSISTORS; MULTIPLICATION; MODEL; Engineering, Electrical & Electronic

    Abstract

    The performance of heterojunction bipolar transistors operating in the avalanche breakdown regime has been evaluated. The analysis shows that AlGaAs/GaAs HBT under avalanche breakdown has higher collector-base junction capacitance, lower Early voltage, higher device noise, lower power efficiency, lower cut-off frequency, reduced device switching speed, and degraded maximum frequency of oscillation.

    Journal Title

    International Journal of Electronics

    Volume

    74

    Issue/Number

    6

    Publication Date

    1-1-1993

    Document Type

    Article

    Language

    English

    First Page

    909

    Last Page

    916

    WOS Identifier

    WOS:A1993LG94600009

    ISSN

    0020-7217

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