Phototransistor measurements in AlGaN/GaN HBTs
Abbreviated Journal Title
DEVICE CREATION; TEMPERATURE; SI; LI; Engineering, Electrical & Electronic
A fast and reliable method for evaluation of transistor gain in npn AlGaN/GaN heterojunction bipolar transistors is demonstrated. The method is based on phototransistor measurements. which are carried out in situ in a scanning electron microscope. Electron beam current was used in these measurements as an analogue of current in the base, which remained floating. The obtained common-emitter DC current gain, beta, is similar to2.5, This value is in good agreement with the values of beta obtained from the conventional three-terminal measurements.
"Phototransistor measurements in AlGaN/GaN HBTs" (2001). Faculty Bibliography 2000s. 2536.