Phototransistor measurements in AlGaN/GaN HBTs

    Authors

    L. Chernyak; A. Osinsky; S. J. Pearton;F. Ren

    Comments

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    Abbreviated Journal Title

    Electron. Lett.

    Keywords

    DEVICE CREATION; TEMPERATURE; SI; LI; Engineering, Electrical & Electronic

    Abstract

    A fast and reliable method for evaluation of transistor gain in npn AlGaN/GaN heterojunction bipolar transistors is demonstrated. The method is based on phototransistor measurements. which are carried out in situ in a scanning electron microscope. Electron beam current was used in these measurements as an analogue of current in the base, which remained floating. The obtained common-emitter DC current gain, beta, is similar to2.5, This value is in good agreement with the values of beta obtained from the conventional three-terminal measurements.

    Journal Title

    Electronics Letters

    Volume

    37

    Issue/Number

    23

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    1411

    Last Page

    1412

    WOS Identifier

    WOS:000172373300028

    ISSN

    0013-5194

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