Copper electromigration modeling including barrier layer effect
Abbreviated Journal Title
copper electromigration; barrier layer effect; pulse-DC stress; interconnect lifetime; continuity equation; reduced vacancy; concentration; THIN-FILMS; RELIABILITY; FAILURE; STRESS; MICROSTRUCTURE; INTERCONNECTS; CONDUCTOR; DIFFUSION; BOUNDARY; DC; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is analyzed numerically. The barrier layer used to stop the copper diffusion also improves the interconnect lifetime. The improvement of lifetime under the DC stress is higher than that under the pulsed DC stress. The lifetime model predictions are also compared with experimental data. Good agreement between the model predictions and experiments is obtained. (C) 2001 Elsevier Science Ltd. All rights reserved.
"Copper electromigration modeling including barrier layer effect" (2001). Faculty Bibliography 2000s. 3008.