Copper electromigration modeling including barrier layer effect

    Authors

    W. Wu;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    copper electromigration; barrier layer effect; pulse-DC stress; interconnect lifetime; continuity equation; reduced vacancy; concentration; THIN-FILMS; RELIABILITY; FAILURE; STRESS; MICROSTRUCTURE; INTERCONNECTS; CONDUCTOR; DIFFUSION; BOUNDARY; DC; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is analyzed numerically. The barrier layer used to stop the copper diffusion also improves the interconnect lifetime. The improvement of lifetime under the DC stress is higher than that under the pulsed DC stress. The lifetime model predictions are also compared with experimental data. Good agreement between the model predictions and experiments is obtained. (C) 2001 Elsevier Science Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    45

    Issue/Number

    12

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    2011

    Last Page

    2016

    WOS Identifier

    WOS:000172552900007

    ISSN

    0038-1101

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