Title

Copper electromigration modeling including barrier layer effect

Authors

Authors

W. Wu;J. S. Yuan

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

copper electromigration; barrier layer effect; pulse-DC stress; interconnect lifetime; continuity equation; reduced vacancy; concentration; THIN-FILMS; RELIABILITY; FAILURE; STRESS; MICROSTRUCTURE; INTERCONNECTS; CONDUCTOR; DIFFUSION; BOUNDARY; DC; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Electromigration lifetime considering the barrier layer effect under the DC and pulsed DC stress is analyzed numerically. The barrier layer used to stop the copper diffusion also improves the interconnect lifetime. The improvement of lifetime under the DC stress is higher than that under the pulsed DC stress. The lifetime model predictions are also compared with experimental data. Good agreement between the model predictions and experiments is obtained. (C) 2001 Elsevier Science Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

45

Issue/Number

12

Publication Date

1-1-2001

Document Type

Article

Language

English

First Page

2011

Last Page

2016

WOS Identifier

WOS:000172552900007

ISSN

0038-1101

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