Controlled ion migration tuning of semiconductor electrical properties

    Authors

    L. Chernyak;D. Cahen

    Comments

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    Keywords

    ion migration tuning; semiconductor; electrical properties; EMITTING ELECTROCHEMICAL-CELLS; P-N-JUNCTION; SCANNING TUNNELING; MICROSCOPE; CUINSE2 SINGLE-CRYSTALS; MOLECULAR-BEAM EPITAXY; ROOM-TEMPERATURE; SOLAR-CELLS; GALLIUM ARSENIDE; DIFFUSION-COEFFICIENT; TRANSISTOR STRUCTURES; Materials Science, Multidisciplinary; Physics, Condensed Matter

    Abstract

    A semiconductor that contains dopants can be considered as a mixed electronic-ionic conductor, with the dopants as mobile ions. The temperature range in which this normally becomes true is far from where the opto-electronic properties of the material are of interest. However, exceptions exist. In this chapter we consider several important cases. Dopant diffusion and drift are relevant not only for materials such as Si:Li, used in radiation detectors, but also for other semiconductors, ranging from II-VIs and related compounds, such as CdTe, (Hg,Cd)Te and CuInSe(2), to III-Vs, including GaN, and potential high temperature semiconductors, such as SiC. Better understanding of the phenomena is important also because of the implications that it has for device miniaturization. as dopant diffusion and drift put chemical limits to device stability. Such understanding can also make dopant electromigration useful for loci-temperature doping.

    Journal Title

    Soft Chemistry Leading to Novel Materials

    Volume

    191

    Publication Date

    1-1-2001

    Document Type

    Article

    Language

    English

    First Page

    61

    Last Page

    97

    WOS Identifier

    WOS:000168223600004

    ISSN

    1012-0386; 3-908450-59-4

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