Voltage stress-induced performance degradation in NMOSFET mixer
Abbreviated Journal Title
IEICE Electron. Express
CMOS integrated circuits; hot carrier; stress; noise; gain; linearity; HOT-CARRIER; SOFT-BREAKDOWN; Engineering, Electrical & Electronic
This paper presents an insight into the performance degradation in Gilbert mixer due to the voltage stress-induced hot carrier effects. Analytical analysis relates the performance degradation with the model parameter shifts caused by voltage stress. The stress-induced parameter shifts are examined experimentally. Performance degradation in mixer is investigated through Spectre-RF simulation with the models extracted from measured data.
Ieice Electronics Express
"Voltage stress-induced performance degradation in NMOSFET mixer" (2005). Faculty Bibliography 2000s. 5816.