Voltage stress-induced performance degradation in NMOSFET mixer

    Authors

    C. Yu; H. Yang; E. Xiao;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    IEICE Electron. Express

    Keywords

    CMOS integrated circuits; hot carrier; stress; noise; gain; linearity; HOT-CARRIER; SOFT-BREAKDOWN; Engineering, Electrical & Electronic

    Abstract

    This paper presents an insight into the performance degradation in Gilbert mixer due to the voltage stress-induced hot carrier effects. Analytical analysis relates the performance degradation with the model parameter shifts caused by voltage stress. The stress-induced parameter shifts are examined experimentally. Performance degradation in mixer is investigated through Spectre-RF simulation with the models extracted from measured data.

    Journal Title

    Ieice Electronics Express

    Volume

    2

    Issue/Number

    5

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    133

    Last Page

    137

    WOS Identifier

    WOS:000239561000002

    ISSN

    1349-2543

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