Title
Voltage stress-induced hot carrier effects on SiGe HBT VCO
Abbreviated Journal Title
Microelectron. Reliab.
Keywords
BIPOLAR-TRANSISTORS; DEGRADATION; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Abstract
This paper presents the hot carrier (HC) induced performance degradation in a 10 GHz voltage controlled oscillator (VCO) with SiGe heterojunction bipolar transistors (HBTs). SiGe device characteristics due to HC stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured data are used in Cadence SpectreRF simulation to verify the HC effect on the VCO. The VCO shows significant vulnerability to hot carriers. (c) 2005 Elsevier Ltd. All rights reserved.
Journal Title
Microelectronics Reliability
Volume
45
Issue/Number
9-11
Publication Date
1-1-2005
Document Type
Article; Proceedings Paper
Language
English
First Page
1402
Last Page
1405
WOS Identifier
ISSN
0026-2714
Recommended Citation
"Voltage stress-induced hot carrier effects on SiGe HBT VCO" (2005). Faculty Bibliography 2000s. 5817.
https://stars.library.ucf.edu/facultybib2000/5817
Comments
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