Title

Voltage stress-induced hot carrier effects on SiGe HBT VCO

Authors

Authors

C. Z. Yu; E. J. Xiao;J. S. Yuan

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

BIPOLAR-TRANSISTORS; DEGRADATION; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

This paper presents the hot carrier (HC) induced performance degradation in a 10 GHz voltage controlled oscillator (VCO) with SiGe heterojunction bipolar transistors (HBTs). SiGe device characteristics due to HC stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured data are used in Cadence SpectreRF simulation to verify the HC effect on the VCO. The VCO shows significant vulnerability to hot carriers. (c) 2005 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

45

Issue/Number

9-11

Publication Date

1-1-2005

Document Type

Article; Proceedings Paper

Language

English

First Page

1402

Last Page

1405

WOS Identifier

WOS:000232253500025

ISSN

0026-2714

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