Voltage stress-induced hot carrier effects on SiGe HBT VCO

    Authors

    C. Z. Yu; E. J. Xiao;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    BIPOLAR-TRANSISTORS; DEGRADATION; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    This paper presents the hot carrier (HC) induced performance degradation in a 10 GHz voltage controlled oscillator (VCO) with SiGe heterojunction bipolar transistors (HBTs). SiGe device characteristics due to HC stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured data are used in Cadence SpectreRF simulation to verify the HC effect on the VCO. The VCO shows significant vulnerability to hot carriers. (c) 2005 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    45

    Issue/Number

    9-11

    Publication Date

    1-1-2005

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    1402

    Last Page

    1405

    WOS Identifier

    WOS:000232253500025

    ISSN

    0026-2714

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