Terahertz amplification in delta-doped germanium films with in-plane transport
Abbreviated Journal Title
J. Appl. Phys.
PHONON SCATTERING; P-GE; HOLES; ABSORPTION; MOBILITY; Physics, Applied
Amplification of terahertz radiation on intersubband transitions has been analyzed by numerical Monte Carlo simulation for p-type delta-doped Ge films with in-plane transport configuration of applied electric and magnetic fields. A significant increase of the gain is found, compared to existing bulk p-Ge lasers, due to spatial separation of light and heavy hole streams, which reduces scattering of light holes on ionized impurities and heavy holes. The considered device has potential as a widely tunable (2-4 THz) laser with high duty cycle and operating temperatures up to 50 K. (C) 2006 American Institute of Physics.
Journal of Applied Physics
"Terahertz amplification in delta-doped germanium films with in-plane transport" (2006). Faculty Bibliography 2000s. 6088.