Authors

M. V. Dolguikh; A. V. Muravjov;R. E. Peale

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

PHONON SCATTERING; P-GE; HOLES; ABSORPTION; MOBILITY; Physics, Applied

Abstract

Amplification of terahertz radiation on intersubband transitions has been analyzed by numerical Monte Carlo simulation for p-type delta-doped Ge films with in-plane transport configuration of applied electric and magnetic fields. A significant increase of the gain is found, compared to existing bulk p-Ge lasers, due to spatial separation of light and heavy hole streams, which reduces scattering of light holes on ionized impurities and heavy holes. The considered device has potential as a widely tunable (2-4 THz) laser with high duty cycle and operating temperatures up to 50 K.

Journal Title

Journal of Applied Physics

Volume

99

Issue/Number

9

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

4

WOS Identifier

WOS:000237682900006

ISSN

0021-8979

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