Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
GAS SENSORS; ABSORPTION; FILMS; O-2; Physics, Applied
Abstract
A correlation between the surface reactions and the electrical response of doped nano-metal-oxide-semiconductors exposed to reducing gas is established using Fourier transform infrared (FTIR) spectroscopy. The effect of processing temperature on the microstructure evolution and the electronic conduction of the nanocrystalline In-SnO2 is presented. Variation in the charge carrier density is correlated to the solid/gas reaction of In-SnO2 in the nanodomain using the Drude-Zener theory including Spitzer and Fan's [Phys. Rev. 99, 1893 (1955)] correction to accommodate for the quantum effects. Higher gas sensitivity for nanocrystalline size less than twice the space charge layer thickness is observed using in situ FTIR.
Journal Title
Applied Physics Letters
Volume
89
Issue/Number
14
Publication Date
1-1-2006
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Drake, Christina; Deshpande, Sameer; and Seal, Sudipta, "Determination of free carrier density and space charge layer variation in nanocrystalline In3+ doped tin oxides using Fourier transform infrared spectroscopy" (2006). Faculty Bibliography 2000s. 6092.
https://stars.library.ucf.edu/facultybib2000/6092
Comments
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