Study of electrical stress effect on SiGe HBT low-noise amplifier performance by simulation
Abbreviated Journal Title
IEEE Trans. Device Mater. Reliab.
HBT; hot-carriers; low-noise amplifier; SiGe; S-parameters; VBIC model; HETEROJUNCTION BIPOLAR-TRANSISTORS; DEGRADATION; RF; RELIABILITY; TECHNOLOGY; PARAMETER; CIRCUIT; MODEL; Engineering, Electrical & Electronic; Physics, Applied
This paper investigates the hot-carrier-induced performance degradation in a cascode low-noise amplifier using SiGe heterojunction bipolar transistors. Changes in device characteristics due to accelerated hot-carrier stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured device data before and after stress are used in Cadence SpectreRF simulation to evaluate the circuit performance degradation.
Ieee Transactions on Device and Materials Reliability
"Study of electrical stress effect on SiGe HBT low-noise amplifier performance by simulation" (2006). Faculty Bibliography 2000s. 6745.